类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UFDFPN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24C32S-FCU6T/TSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 4WLCSP |
|
IS42S16400D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 60MINIBGA |
|
70V34S20PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
AT25SF041B-MHB-TAdesto Technologies |
IC FLASH 4MBIT SPI/QUAD 8USON |
|
AT25320B-SSPDGV-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 5MHZ 8SOIC |
|
IS42S16160B-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
R1EX25002ATA00I#S0Renesas Electronics America |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
70V9389L6PRF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
NM27C010N150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32DIP |
|
IS49NLC18320-33BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
MT48V8M32LFB5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
70V261S55PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS43LR32200B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |