类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1LV0208BSA-7SI#S0Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 32STSOP |
|
MT29F128G08CFAAAWP-Z:AMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
AT29LV020-25JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
S34ML01G200BHA000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
RC28F256J3F95GMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
S29GL032N90FAI030Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
MT45W8MW16BGX-708 WT TRMicron Technology |
IC PSRAM 128MBIT PAR 54VFBGA |
|
IDT70P3337S233RMRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 576FCBGA |
|
AT25640T1-10TC-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 14TSSOP |
|
W632GU6NB11JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
SST39LF020-45-4C-WHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
IDT71256SA25PZRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
IS42S32200E-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |