类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25128T2-10TCRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20TSSOP |
|
IDT71V25761YSA200BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M29W320DB70N6EMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT49BV002ANT-70TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT49BV162A-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
FT93C66A-ITR-BFremont Micro Devices |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
MT47H16M16BG-3E:BMicron Technology |
IC DRAM 256MBIT PARALLEL 84FBGA |
|
AT45DB041B-SIRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 20MHZ 8SOIC |
|
AS4C2M32S-6TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS61LF51218A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61VF102418A-6.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
NM93C46EMSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 14SOIC |
|
IS42S81600E-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |