类型 | 描述 |
---|---|
系列: | WS-P |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH, PSRAM |
内存大小: | 256Mbit Flash, 64Mbit RAM |
内存接口: | Parallel |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-FBGA (11.6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
5962-8866512ZARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
CY62157DG30LL-55ZSXIRochester Electronics |
ASYNC RAM |
|
CG8775AFCypress Semiconductor |
IC MEM F-RAM SERIAL 8SOP |
|
SN74AS870DWRRochester Electronics |
DUAL-PORT SRAM, 16X4, 15NS, TTL |
|
MT29F2G16ABBEAH4-AAT:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
MT29F256G08EBHBFJ4-3ITFES:B TRMicron Technology |
IC FLASH 256G PARALLEL 132VBGA |
|
6116LA120TDBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
CAV25512HU5E-GT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
MT53D256M64D4KA-046 XT:BMicron Technology |
IC DRAM 16GBIT 2133MHZ |
|
27S29AJCRochester Electronics |
PROGRAMMABLE ROM |
|
MT25TL512BBA8ESF-0AAT TRMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
|
S25FL512SAGBHMC13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
W972GG8KS-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |