类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W972GG8KS-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
FM24W256-EGRochester Electronics |
IC FRAM 256KBIT I2C 1MHZ 8SOIC |
|
FM93C66LMT8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
FM24C05ULVMT8Rochester Electronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
GS816118BD-150IFlip Electronics |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
FM24C03ULMT8Rochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY62147EV18LL-55XIKBRochester Electronics |
ASYNC RAM |
|
MT29F256G08EBHBFJ4-3ITF:B TRMicron Technology |
TLC 256G 32GX8 VBGA |
|
N25Q128A13ESFH0E TRMicron Technology |
IC FLASH 128MBIT SPI 16SOP2 |
|
IS43DR32160C-3DBLRochester Electronics |
IS43DR32160C - 16MX32, 512MB DDR |
|
CG7604ATRochester Electronics |
SPECIAL |
|
R1LP0408CSC-7LC#D0Rochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
70V26L35GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |