类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (32M x 4) |
内存接口: | SPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 8ms, 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43DR32160C-3DBLRochester Electronics |
IS43DR32160C - 16MX32, 512MB DDR |
|
CG7604ATRochester Electronics |
SPECIAL |
|
R1LP0408CSC-7LC#D0Rochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
70V26L35GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
|
SMJ64C16L-45JDMRochester Electronics |
STANDARD SRAM, 16KX1 |
|
MT29F128G08AKCABH2-10Z:AMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
MT58L256V36PS-6 TRRochester Electronics |
SRAM SYNC QUAD 8M-BIT 256KX36 |
|
MT46H64M16LFT68MWC2Micron Technology |
MOBILE DDR 1G DIE 64MX16 |
|
S29GL01GT11TFV033Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MT44K64M18RB-083F:AMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
CG7918AARochester Electronics |
SPECIAL |
|
7MPV4145S15MRochester Electronics |
256K X 32 3.3V SRAM MODULE |
|
MT35XU256ABA1G12-0AUT TRMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |