







CRYSTAL 24.5535MHZ 8PF SMD
ACDC 1000A INDUSTRIAL CLAMP
IC DAC 16BIT V-OUT 20QFN
IC SRAM 64KBIT PARALLEL 68PGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 68-BPGA |
| 供应商设备包: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CAT25010LGIRochester Electronics |
IC EEPROM 1KBIT SPI 20MHZ 8DIP |
|
|
S99FL512SDSMFBG13Cypress Semiconductor |
IC NOR |
|
|
AS4C512M8D3LC-12BINTRAlliance Memory, Inc. |
512M X 8, 1.35V, 800MHZ, DDR3-16 |
|
|
MT40A16G4WPF-062H:BMicron Technology |
IC FLASH 64GBIT 1.6GHZ |
|
|
5962-8866206NARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
|
MT47H256M4SH-25E:MMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
|
MT51K256M32HF-70:BMicron Technology |
IC RAM 8GBIT PARALLEL 1.75GHZ |
|
|
HTEE25608DHoneywell Aerospace |
IC EEPROM 256KBIT PAR 56CPGA |
|
|
N24S64BC4DYT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64K I2C 1MHZ 4WLCSP |
|
|
MT53D1024M32D4DT-046 AAT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
|
S25FS128SAGNFV100Cypress Semiconductor |
IC FLSH 128MBIT SPI 133MHZ 8WSON |
|
|
5962-9161704MYARenesas Electronics America |
IC SRAM 128KBIT PAR 84FLATPAK |
|
|
MT29F256G08AUCABH3-10Z:A TRMicron Technology |
IC FLASH 256GBIT PAR 100LBGA |