类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 750µs |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT25C08SE-26671Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
MT29RZ4C8DZZMHAN-18W.80D TRMicron Technology |
IC FLASH RAM 4G PARALLEL 533MHZ |
|
93L425ADM/BRochester Electronics |
1K X 1 TTL SRAM |
|
CG7261ATRochester Electronics |
SPECIAL |
|
MT41K128M16JT-125:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
29705APCBRochester Electronics |
SRAM |
|
8403610JARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
MT53D1G64D8NZ-046 WT:E TRMicron Technology |
IC DRAM 64GBIT 2133MHZ 376WFBGA |
|
CG7677AARochester Electronics |
SPECIAL |
|
FM93C56LMT8XRochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
MT29F2T08EMHBFJ4-T:B TRMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
7024S35FBRenesas Electronics America |
IC SRAM 64KBIT PAR 84FLATPAK |
|
M5M5256DVP-70XL#SERochester Electronics |
STANDARD SRAM, 32KX8 |