类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 48-DIP (0.600", 15.24mm) |
供应商设备包: | 48-SIDE BRAZED |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTFC4GLGDQ-AIT AMicron Technology |
IC FLASH 32GBIT MMC 100LBGA |
|
SM667PX2-ACSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 SL |
|
MT53E4D1ADE-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT41K256M16TW-107 IT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
70V07L35JGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
24AA64T-I/CS16KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 5CSP |
|
7025S55GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
AS4C512M8D3LC-12BINAlliance Memory, Inc. |
512M X 8, 1.35V, 800MHZ, DDR3-16 |
|
IS66WV51216EALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PARALLEL 48TFBGA |
|
AT25XE321D-UUN-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 12WLCSP |
|
FM25C040ULMT8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
CAT24C04LGIRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
CG8406AARochester Electronics |
IC SRAM |