类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LCC |
供应商设备包: | 48-LCC (14.22x14.22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A1G16RC-062E:BMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
|
7027L35GRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 108PGA |
|
IS43DR16320E-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CG6059ATTRochester Electronics |
SPECIAL |
|
CP6745DMRochester Electronics |
USB |
|
SM667GE4-ACSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 4.5 SL |
|
M5M5256DVP-70GI#SERochester Electronics |
STANDARD SRAM, 32KX8 |
|
MT29F4T08EUHAFM4-3T:AMicron Technology |
IC FLASH 4TB PARALLEL 333MHZ |
|
M29F400FB55N3E2Alliance Memory, Inc. |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CG6039AARochester Electronics |
SPECIAL |
|
IS43DR16320E-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
7025L70GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
CG7765AARochester Electronics |
SPECIAL |