类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EDBA232B2PB-1D-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 168FBGA |
|
MT29F4G01ABAFDM70A3WC1Micron Technology |
IC FLASH SLC 4G NAND |
|
MF28F010-20/BRochester Electronics |
FLASH 128KX8 |
|
MT44K64M18RB-107E:A TRMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
27S03ADM/BRochester Electronics |
27S03ADM/B |
|
AS4C1G8D4-75BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
CY62168GN30-45BVXICypress Semiconductor |
MICROPOWER SRAMS |
|
7025L20FBRenesas Electronics America |
IC SRAM 128KBIT PAR 84FLATPAK |
|
FM24C08ULMT8Rochester Electronics |
IC EEPROM 8KBIT I2C 8TSSOP |
|
93425FM/BRochester Electronics |
1K X 1 TTL SRAM |
|
W25Q64JWBYIM TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 12WLCSP |
|
MT53E256M16D1DS-046 WT:B TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
IS61LPS51218B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |