English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-VFBGA |
| 供应商设备包: | 56-FBGA (9x7) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT25010YGIRochester Electronics |
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP |
|
|
MT47H32M16NF-25E AIT:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
|
AS6C4008-55STINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32STSOP |
|
|
AM27S33/BYARochester Electronics |
IC PROM 4KBIT PAR 18CFLATPACK |
|
|
7006L35GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
|
R1EX24064ATA00A#S0Rochester Electronics |
EEPROM, 8KX8, SERIAL |
|
|
71V016SA20BFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
|
MTFC4GACAAAM-4M ITFlip Electronics |
4GB, E MMC MEMORY |
|
|
MT53D512M64D4RQ-046 WT:EMicron Technology |
IC DRAM 32GBIT 2133MHZ 556WFBGA |
|
|
MT53E2G32D8QD-053 WT:EMicron Technology |
LPDDR4 64G 2GX32 FBGA WT 8DP |
|
|
M5M5V208AKV-70HISTRochester Electronics |
128K X16, SRAM |
|
|
CY7C1347G-250AXCKJRochester Electronics |
SYNC RAM |
|
|
HM4-6642-9Rochester Electronics |
512 X 8 CMOS PROM |
