类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SGRAM - GDDR6 |
内存大小: | 16Gb (512M x 32) |
内存接口: | Parallel |
时钟频率: | 8 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.31V ~ 1.391V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 180-TFBGA |
供应商设备包: | 180-FBGA (12x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95M04-DRCS6TPVFSTMicroelectronics |
4-MBIT SERIAL SPI BUS EEPROM |
|
CYPT1049DV33-12FZMBCypress Semiconductor |
IC SRAM 4MBIT PAR 36CFLATPACK |
|
MT53E1536M32D4DT-046 WT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
CS7195ATRochester Electronics |
USB |
|
CG6747ATRochester Electronics |
SRAM CG6747AT |
|
7006L20FBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68FPACK |
|
70T3519S166BCGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
FM93CS56LMT8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
7006L45FBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68FPACK |
|
TE28F008S3150Rochester Electronics |
FLASH, 1MX8, 150NS, PDSO40 |
|
CG7494AFRochester Electronics |
CG7494AF |
|
NM34C02LMT8XRochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
CY7C185-25SCRochester Electronics |
STANDARD SRAM, 8KX8, 25NS |