类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 85ns |
访问时间: | 85 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.300", 7.62mm) |
供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M30162040054X0PWARRenesas Electronics America |
IC RAM 16MBIT 54MHZ 8DFN |
|
MT53D256M64D4KA-046 XT:B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ |
|
CG7542AFRochester Electronics |
CLOCK DISTRIBUTION |
|
CG8131AARochester Electronics |
SPECIAL |
|
S29AL008J55BFIR20ARochester Electronics |
PARALLEL NOR FLASH, 512KX16 |
|
CY44C036PW-GE1Cypress Semiconductor |
IC MCD AUTO ANALOG 56WLCSP |
|
CY7C1372DV25-167CKJRochester Electronics |
SYNC RAM |
|
27C16Q45/BRochester Electronics |
27C16Q45/B |
|
CAT24C256ZD2GIRochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8TDFN |
|
CY14B116N-BA25XIRochester Electronics |
IC NVSRAM 16MBIT PARALLEL 60FBGA |
|
CAT93C66YIRochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
MT41J128M16JT-107G:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
M5M5W817KT-70HI#BTRochester Electronics |
512K X16, SRAM |