类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29PL064J55BFI073Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56FBGA |
|
EM6GA16LBXA-12HEtron Technology |
256M BIT RPC DRAM (FBGA 96 BALLS |
|
MT29AZ5A5CMGWD-18AIT.87CMicron Technology |
IC FLASH 8GB NAND MCP |
|
MTFC4GLGDM-AIT AMicron Technology |
IC FLASH 32GBIT MMC 153TFBGA |
|
CG6707BMRochester Electronics |
SPECIAL |
|
CAT24C512C8UTRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 8WLCSP |
|
48LM01T-I/SMRoving Networks / Microchip Technology |
IC EERAM 1MBIT SPI 66MHZ 8SOIJ |
|
MT53E128M16D1DS-046 WT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
MT52L768M32D3PU-107 WT:B TRMicron Technology |
IC DRAM 24GBIT 933MHZ 168FBGA |
|
SM662GXD-BDSTSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 3D TLC |
|
S29VS128RABBHI000ARochester Electronics |
PARALLEL NOR FLASH, 1.8V, 128MB |
|
S29VS064RABBHW013Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 44FBGA |
|
MT53E2D1BCY-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |