类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 3Tb (384G x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MB85RS4MLYPF-G-BCERE1Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT SPI 50MHZ 8SOP |
![]() |
CG8201AARochester Electronics |
SPECIAL |
![]() |
M10042040108X0ISARRenesas Electronics America |
IC RAM 4MBIT SPI 108MHZ 8SOIC |
![]() |
7025S55GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
![]() |
CG5195AFRochester Electronics |
CG5195AF |
![]() |
R1RW0404DGE-2PR#B0Rochester Electronics |
4M HIGH SPEED SRAM (1M X 4-BIT) |
![]() |
MT53E2D1ACY-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
![]() |
CY62157DV20L-5BVIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
![]() |
R1WV6416RBG-7SI#B0Rochester Electronics |
IC SRAM 64MBIT PARALLEL 48TFBGA |
![]() |
MT29F2G08ABBGAM79A3WC1LMicron Technology |
IC FLASH NAND 2G 256MX8 DIE |
![]() |
EDB8164B4PT-1DAT-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
![]() |
MT29F8G01ADAFD12-IT:F TRMicron Technology |
IC FLASH 8GBIT SPI 83MHZ 24TPBGA |
![]() |
CG7049ATRochester Electronics |
SPECIAL |