类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR4 |
内存大小: | 8Gb (2G x 4) |
内存接口: | Parallel |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.26V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (7.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HN27C4096AHG85Rochester Electronics |
UV EPROM, 256KX16, 85NS |
|
R1LV0108ESA-7SI#BARochester Electronics |
STANDARD SRAM, 128KX8, 70NS |
|
7006S35GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
5962-8687516YARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
MT29F2G08ABAGAH4-AAT:GMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
CG6227AARochester Electronics |
SPECIAL |
|
CG7734AARochester Electronics |
SPECIAL |
|
PAL16H2AJ/883Rochester Electronics |
ELECTRICALLY ERASABLE PAL DEVIC |
|
MX29GL512GUT2I-11GMacronix |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
70V659S10DRGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
CAT24C32WGI-26756Rochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
CAT93C66VGI-1.8-T3Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MTFC16GAKAEEF-AAT TRMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |