English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 256Kb (16K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 84-BPGA |
| 供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT42L64M32D2HE-18 IT:D TRMicron Technology |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
|
8403615JARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
|
CP7215AARochester Electronics |
USB |
|
|
DS1250Y-EMCRochester Electronics |
DS1250 512K X 8 NV SRAM MODULE |
|
|
GVT71128E36T-10TRochester Electronics |
SRAM CHIP SYNC SINGLE 3.3V 4M BI |
|
|
CY7C1514KV18-250CKBRochester Electronics |
SYNC RAM |
|
|
PY7C1021CV33-10ZCRochester Electronics |
1-MBIT (64K X 16) SRAM |
|
|
CAV24C512HU5EGT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8UDFN |
|
|
MX29GL128FDT2I-90GMacronix |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
|
CG6740ATRochester Electronics |
SPECIAL |
|
|
CAT25C08VGI-1.8Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
|
IS61WV51216EEBLL-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
|
S29PL064J70BFI072Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56FBGA |
