English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 64Gb (8G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT53D512M64D4RQ-053 WT:E TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
|
MT53D512M64D4NZ-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 376WFBGA |
|
|
MT53E512M64D4NK-053 WT:DMicron Technology |
IC DRAM LPDDR4 FBGA |
|
|
CY7C182-35SCRochester Electronics |
8KX9 STATIC RAM |
|
|
4164-15JDS/BEARochester Electronics |
DUAL MARKED (8201006EA) |
|
|
RM24C32C-LCSI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 6WLCSP |
|
|
MT40A512M8SA-062E AUT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
MX66L51255FXDI-10GMacronix |
IC FLASH 512MBIT |
|
|
M10162040108X0PSAYRenesas Electronics America |
IC RAM 16MBIT 108MHZ 8SOIC |
|
|
M30162040054X0ISARRenesas Electronics America |
IC RAM 16MBIT SPI 54MHZ 8SOIC |
|
|
MT62F768M64D4EJ-031 WT:AMicron Technology |
LPDDR5 48G 768MX64 FBGA QDP |
|
|
EM6GA16LCAEA-12HEtron Technology |
256M BIT RPC DRAM (WLCSP) |
|
|
CG6876AMRochester Electronics |
SPECIAL |
