English
简体中文
MOSFET N-CH 600V 22A TO3P
IC REG LIN 5V 100MA 8DSO E-PAD
IC DRAM 512MBIT PAR 66TSOP II
LED MICRO SIDELED 3806
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CG7339AMRochester Electronics |
SPECIAL |
|
|
70V26L25GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
|
|
S29GL01GT11DHB020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
|
27LV512-20/L089Rochester Electronics |
512K (64K X 8) CMOS EPROM |
|
|
5962-8976406MYARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48LCC |
|
|
70V3599S133BFGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
|
5962-9150810MYARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68FPACK |
|
|
MTFC256GAOAMAM-WT TRMicron Technology |
IC FLASH 2TB MMC |
|
|
S25FL256SAGBAEA00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
|
CY7C028V-20AIFlip Electronics |
DUAL-PORT SRAM, 64KX16, 20NS, CM |
|
|
CY7C1380D-167AXCBRochester Electronics |
18-MBIT (512K X 36/1M X 18) SRAM |
|
|
MX29GL128FHXGI-90GMacronix |
IC FLSH 128MBIT PARALLEL 56TFBGA |
|
|
AS4C32M16SB-7BINAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |