类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-T |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
27LV512-20/L089Rochester Electronics |
512K (64K X 8) CMOS EPROM |
|
5962-8976406MYARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48LCC |
|
70V3599S133BFGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
5962-9150810MYARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68FPACK |
|
MTFC256GAOAMAM-WT TRMicron Technology |
IC FLASH 2TB MMC |
|
S25FL256SAGBAEA00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY7C028V-20AIFlip Electronics |
DUAL-PORT SRAM, 64KX16, 20NS, CM |
|
CY7C1380D-167AXCBRochester Electronics |
18-MBIT (512K X 36/1M X 18) SRAM |
|
MX29GL128FHXGI-90GMacronix |
IC FLSH 128MBIT PARALLEL 56TFBGA |
|
AS4C32M16SB-7BINAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
S25FS512SAGNFA013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
AS4C512M16D4-75BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
N24S64C4DYT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP |