







DIODE GEN PURP 600V 1.5A DO214AC
CONN HEADER R/A 34POS 2MM
IC REG LINEAR 8V 5A D2PAK-3
IC FLASH 32GBIT MMC 100LBGA
| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 32Gb (4G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LBGA |
| 供应商设备包: | 100-LBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SMJ68CE16L-25JDMRochester Electronics |
DUAL MARKED (5962-8874002LA) |
|
|
8403608LARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
|
MT29F16G08ABECBM72A3WC1PMicron Technology |
IC FLASH 16GBIT PARALLEL DIE |
|
|
S25FL132K0XBHI030YRochester Electronics |
SERIAL FLASH, 32MB |
|
|
IS62WV51216EFBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
|
MT53D512M64D4HR-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 366WFBGA |
|
|
5962-9166201MYARenesas Electronics America |
IC SRAM 64KBIT PAR 84FLATPAK |
|
|
GD25LE128DLIGRGigaDevice |
IC FLSH 128MBIT SPI/QUAD 21WLCSP |
|
|
FM93C06LVMT8Rochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
|
MT29F128G08AMCDBJ5-6ITR:DMicron Technology |
IC FLASH 128GBIT PAR 132TBGA |
|
|
CAT24C02WGERochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
|
27S191AJCRochester Electronics |
27S191AJC |
|
|
JM38510/23104BFARochester Electronics |
STATIC RAM, 1K X 1, LOW-POWER, W |