类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 8Mb (512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D512M64D4HR-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 366WFBGA |
|
5962-9166201MYARenesas Electronics America |
IC SRAM 64KBIT PAR 84FLATPAK |
|
GD25LE128DLIGRGigaDevice |
IC FLSH 128MBIT SPI/QUAD 21WLCSP |
|
FM93C06LVMT8Rochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
MT29F128G08AMCDBJ5-6ITR:DMicron Technology |
IC FLASH 128GBIT PAR 132TBGA |
|
CAT24C02WGERochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
27S191AJCRochester Electronics |
27S191AJC |
|
JM38510/23104BFARochester Electronics |
STATIC RAM, 1K X 1, LOW-POWER, W |
|
MTFC32GAPALHT-AIT TRMicron Technology |
IC FLASH 256GBIT MMC |
|
7024S17GRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PGA |
|
5962-8687515YARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
MX29SL800CTXBI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
HN58X24512FPIAG#S0Rochester Electronics |
512K EEPROM (64K X 8 BIT) SERIAL |