English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 1.65V ~ 2.2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CG8230AACypress Semiconductor |
IC SRAM MICROPOWER |
|
|
M36W0R6050T4ZAQF TRMicron Technology |
IC FLASH PSRAM 96M |
|
|
7025S55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
|
7133SA70JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
70V35S20PFIRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
|
MT53B384M64D4NK-062 XT:BMicron Technology |
IC DRAM 24GBIT 1600MHZ 366WFBGA |
|
|
W972GG8JB-25 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
IS43LR32320B-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 90LFBGA |
|
|
93AA76C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |
|
|
70V28VL20PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
70P259L65BYGIRenesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
|
MT29F64G08CBEFBL94C3WC1Micron Technology |
IC FLASH 64GBIT PARALLEL WAFER |
|
|
M29F400FT5AM6T2 TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
