类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Tb (128G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA128SC-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 400KHZ DIE |
|
S99AL008J0330Cypress Semiconductor |
IC FLASH |
|
AT25SF041-DWFAdesto Technologies |
IC FLASH 4MBIT SPI/QUAD WAFER |
|
CG8414AACypress Semiconductor |
IC SRAM ASYNC 32SOJ |
|
7133LA90JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT53B256M32D1Z01MWC1Micron Technology |
LPDDR4 8G DIE 256MX32 |
|
MT40A1G8SA-075:HMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
N25Q064A13E5340F TRMicron Technology |
IC FLASH 64MBIT 108MHZ 8XFSCSP |
|
M29W128GL70ZS3EMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
S99-50411Cypress Semiconductor |
IC FLASH MEMORY |
|
16-3696-01Cypress Semiconductor |
IC GATE NOR |
|
MT49H32M18CBM-18:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT52L256M64D2GN-107 WT:BMicron Technology |
IC DRAM 16GBIT 933MHZ 256FBGA |