类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR4 |
内存大小: | 8Gb (1G x 8) |
内存接口: | Parallel |
时钟频率: | 1.33 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.26V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (7.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
N25Q064A13E5340F TRMicron Technology |
IC FLASH 64MBIT 108MHZ 8XFSCSP |
|
M29W128GL70ZS3EMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
S99-50411Cypress Semiconductor |
IC FLASH MEMORY |
|
16-3696-01Cypress Semiconductor |
IC GATE NOR |
|
MT49H32M18CBM-18:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT52L256M64D2GN-107 WT:BMicron Technology |
IC DRAM 16GBIT 933MHZ 256FBGA |
|
MT53D768M64D8RG-053 WT:DMicron Technology |
IC DRAM 48GBIT 1866MHZ FBGA |
|
MT48LC2M32B2B5-6A AIT:J TRMicron Technology |
IC DRAM 64MBIT PARALLEL 90VFBGA |
|
EDFP112A3PB-GDTJ-F-R TRMicron Technology |
IC DRAM 24GBIT PARALLEL 800MHZ |
|
AT49BV1614AT-90CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
MT53D1536M32D6BE-046 WT:DMicron Technology |
IC DRAM 48G 2133MHZ FBGA |
|
IS46TR85120AL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
70V9389L7PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |