类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 1.65V ~ 2.2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LFBGA |
供应商设备包: | 48-TFBGA (7x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7024S20JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
7007S35JIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
70V25L15PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
MT29F4G08ABAFAH4-AATES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT29F4G08ABAFAH4-AITES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
DS28E01P-W0S+1TMaxim Integrated |
IC EEPROM MEMORY 1KB SMD TOSC |
|
AK6417AMAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KB SCI SSOP |
|
DS28E22P-04A-00+1TMaxim Integrated |
IC EEPROM 2KBIT 1-WIRE 6TSOC |
|
MT53D512M64D4BP-046 WT ES:E TRMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
|
M29W256GH70ZS3F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
M29W128GH70N3EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
7143LA55J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
EDFA164A2PM-JD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |