类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA1024-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ DIE |
|
MT29F4G01ADAGDWB-IT:GMicron Technology |
IC FLASH 4GBIT SPI 8UPDFN |
|
93C56C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
|
MT41K1G8TRF-107:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
S71PL064JA0BAW0P0BCypress Semiconductor |
IC FLASH MEMORY SMD |
|
MT29F128G08EBEBBB95A3WC1Micron Technology |
IC FLASH 128GBIT PARALLEL |
|
MT41K256M16HA-125 M:EMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT35XU512ABA2G12-0AUTMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
|
MT29F8G01ADAFD12-AATES:F TRMicron Technology |
IC FLASH 8GBIT SPI 24TPBGA |
|
MT53D768M64D4SQ-053 WT ES:A TRMicron Technology |
LPDDR4 48G 768MX64 FBGA QDP |
|
CY7C106BN-1XW14Cypress Semiconductor |
IC SRAM ASYNC |
|
CG8275AACypress Semiconductor |
IC MEMORY F-RAM PAR 28SOIC |
|
CG7423AFCypress Semiconductor |
IC MICROPOWER SRAM 48TSOP I |