类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EDFP164A3PB-GD-F-R TRMicron Technology |
IC DRAM 24GBIT PARALLEL 216FBGA |
|
M29W640FT70N6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
SST26VF016B-104I/W70SRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD WAFER |
|
MT43A4G40200NFA-S15 ES:AMicron Technology |
HMC 4GX4 PLASTIC GREEN BGA 2GB 1 |
|
M58WR064KT70D16Micron Technology |
IC FLASH 64MBIT PARALLEL 66MHZ |
|
MT29F256G08AKEBBH7-12:BMicron Technology |
IC FLASH 256GBIT PAR 152TBGA |
|
AT49BV322A-70CURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48CBGA |
|
S99AL008J70TFI010Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
AT45DB011B-CCRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 20MHZ 9CBGA |
|
70T3519S166DRIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
40-1036-01Cypress Semiconductor |
IC FLASH |
|
EDF8164A3MA-GD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 253FBGA |
|
7024S55PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |