English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS62WV12816BLL-55B2IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
|
MT29F256G08AUCABH3-10IT:AMicron Technology |
IC FLASH 256GBIT PAR 100LBGA |
|
|
CG8248AATCypress Semiconductor |
IC SRAM |
|
|
MT53D1024M32D4NQ-046 WT ES:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
|
MT29F256G08CMCDBJ5-6R:D TRMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
|
751205-0010 01Cypress Semiconductor |
IC FLASH NOR |
|
|
MT41K256M16HA-125 M AIT:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
MT53B512M32D2GZ-062 WT ES:BMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
|
MT53B384M64D4NK-062 XT:B TRMicron Technology |
IC DRAM 24GBIT 1600MHZ 366WFBGA |
|
|
71V30S35TFI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
|
CAT25128VIDSanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KB SERIAL SPI 8TSSO |
|
|
M50FLW040AK5GMicron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
|
P770011CF9C006Cypress Semiconductor |
IC FLASH MEM NOR |
