类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LQFP |
供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71321LA55JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
M29W128GL90N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
S99GL064N0080Cypress Semiconductor |
IC FLASH |
|
MT29F256G08CMCDBJ5-6ITR:DMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
S99FL256SAGMFIR00Cypress Semiconductor |
IC FLASH NOR 16SOIC |
|
MT53B256M64D2NV-062 XT ES:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
|
IS41C16100D-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
MT42L64M64D2LL-18 IT:CMicron Technology |
IC DRAM 4GBIT PARALLEL 216FBGA |
|
70V24S35PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT29F4G01ABBFDWB-ITES:F TRMicron Technology |
IC FLASH 4GBIT SPI 8UPDFN |
|
M29F040B90N1T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
CG8232AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
S99-50340Cypress Semiconductor |
IC GATE NOR |