English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 100 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-LCC |
| 供应商设备包: | 44-PLCC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS46DR16320D-25DBA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
|
7132SA35JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
|
MTFC64GASAONS-AIT ESMicron Technology |
IC FLASH 512GBIT MMC 153TFBGA |
|
|
S34SL01G200BHV000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL |
|
|
S4013001200B4S020Cypress Semiconductor |
IC MEMORY NOR |
|
|
MT40A1G16HBA-083E:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
|
|
70V06S20J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
MT53B384M64D4NK-053 WT ES:B TRMicron Technology |
IC DRAM 24GBIT 1866MHZ 366WFBGA |
|
|
S98WS512N0GFW0130Cypress Semiconductor |
IC MEMORY NOR |
|
|
MT48LC16M16A2B4-7E:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
|
S99-50284Cypress Semiconductor |
IC GATE NOR |
|
|
71421LA55JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
|
MT42L128M32D1GU-18 WT:A TRMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
