类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 1.65V ~ 2.2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32JWBYIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT WLCSP |
|
MT29F2G08ABAEAH4-E:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
MT48LC4M32B2B5-6A IT:L TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
MT29F3T08EQHBBG2-3RES:B TRMicron Technology |
IC FLASH 3TB PARALLEL 272TBGA |
|
W632GU6AB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 933MHZ |
|
M87C257-15C6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
SM671PXC-ADSilicon Motion |
FERRI-UFS BGA 153-B EMMC 3D TLC |
|
MT53B1G64D8NW-062 WT:DMicron Technology |
LPDDR4 64G 1GX64 FBGA 8DP |
|
M29W040B90K1STMicroelectronics |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
MT46V64M8P-5B AIT:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT53D512M64D4NW-046 WT ES:E TRMicron Technology |
IC DRAM 32GBIT 2133MHZ 432VFBGA |
|
70V06L25JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
M58LR128KT85ZB6EMicron Technology |
IC FLASH 128MBIT PAR 56VFBGA |