类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 32Gb (512M x 64) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 432-VFBGA |
供应商设备包: | 432-VFBGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V06L25JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
M58LR128KT85ZB6EMicron Technology |
IC FLASH 128MBIT PAR 56VFBGA |
|
S99-50229Cypress Semiconductor |
IC GATE NOR |
|
CG8214AATCypress Semiconductor |
IC SRAM |
|
MT53B4DCNQ-DCMicron Technology |
IC DRAM SPECIAL/CUSTOM 200VFBGA |
|
S72XS256RE0AHBH10Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |
|
AK93C45BHAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 1KBIT SPI 8MSOP |
|
93LC46A-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
S30ML512P30TFI503Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
MT41K2G4TRF-125:EMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
40060389Cypress Semiconductor |
IC FLASH NOR |
|
MT29E512G08CUCABJ3-10Z:A TRMicron Technology |
IC FLASH 512GBIT PAR 132LBGA |
|
CG8588AATCypress Semiconductor |
IC MICROPOWER SRAM 48VFBGA |