English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LQFP |
| 供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EDF8164A3MA-GD-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 253FBGA |
|
|
70V25L55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
|
MT29F512G08CMEABH7-12:AMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
|
NM27C020QE120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 2MBIT PARALLEL 32CDIP |
|
|
MT29AZ5A5CHGSQ-18IT.87UMicron Technology |
IC FLASH 8GB NAND |
|
|
S99PL064J0070Cypress Semiconductor |
IC FLASH |
|
|
MT53B192M32D1Z0AMWC1Micron Technology |
IC DRAM 6GBIT 192MX32 |
|
|
MT53D1024M32D4NQ-062 WT ES:DMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
|
N25Q008A11EF440EMicron Technology |
IC FLASH 8MBIT SPI 108MHZ UFDFPN |
|
|
DS2431P-045-A02+TMaxim Integrated |
IC EEPROM 1KB 1WIRE 6TSOC |
|
|
MT35XL256ABA2G12-0AATMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |
|
|
MTFC2GMUEA-WT TRMicron Technology |
IC FLASH 16GBIT MMC 153VFBGA |
|
|
MTFC4GACAJCN-1M WT-TRMicron Technology |
IC FLASH 32GBIT MMC 153VFBGA |
