类型 | 描述 |
---|---|
系列: | FL-L |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8231AACypress Semiconductor |
IC SRAM 4MB FAST |
|
CG7811AATCypress Semiconductor |
IC SRAM DUAL PORT |
|
70V9359S9PFRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
DS1250BL-70-INDMaxim Integrated |
IC NVSRAM 4MBIT PARALLEL 34LPM |
|
MT53D8D1AJS-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
CG8966AMTCypress Semiconductor |
MEMORY SRAM ASYNC |
|
MT42L256M64D4LM-25 WT:AMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
MT29F1T08CUCCBH8-6ITR:C TRMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
PC28F064M29EWTAMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT53D256M64D4KA-046 XT:ES B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
MT53B512M64D8HR-053 WT:BMicron Technology |
IC DRAM 32GBIT 1866MHZ |
|
DS1350BL-70Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 34LPM |
|
S70GL04GR00FHCAX0ECypress Semiconductor |
IC FLASH |