类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 3Tb (384G x 8) |
内存接口: | Parallel |
时钟频率: | 267 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | - |
供应商设备包: | 272-TBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT42L64M64D2MC-3 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 240FBGA |
|
MT29C4G96MAZBBCJV-48 IT TRMicron Technology |
IC FLASH RAM 4GBIT PAR 168VFBGA |
|
MT53B512M32D2NP-062 WT ES:DMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
N25Q128A13ESED0F TRMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
7134LA20JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
MT29F1G08ABBDAH4-ITX:D TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
70V3399S133BFGI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
MT53B512M64D4TX-053 WT ES:CMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
|
QMP29GL512R10TFIR10Cypress Semiconductor |
IC MEMORY NOR |
|
N25Q064A13ESF42EE01Micron Technology |
IC FLASH 64MBIT SPI 108MHZ 16SO |
|
CG8267AACypress Semiconductor |
IC SRAM |
|
MT53B1DATG-DCMicron Technology |
LPDDR4 8G |
|
SST26VF032BT-104V/SM70SVAORoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |