类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.75V ~ 5.25V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 34-LPM |
供应商设备包: | 34-LPM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT42L128M64D2MC-25 WT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 240FBGA |
![]() |
70P245L90BYGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100CABGA |
![]() |
MT29F512G08CLCCBG1-6R:CMicron Technology |
IC FLASH 512GBIT PAR 272VBGA |
![]() |
S99GL128P10TFI010Cypress Semiconductor |
IC GATE NOR |
![]() |
S99ML01G10040SkyHigh Memory Limited |
IC GATE NAND |
![]() |
9021931Cypress Semiconductor |
IC FLASH |
![]() |
MT46V64M8T67A3WC1Micron Technology |
DDR 512M DIE 64MX8 |
![]() |
CG8413AATCypress Semiconductor |
IC SRAM ASYNC 85SOJ |
![]() |
M58WR064KB70ZB6EMicron Technology |
IC FLASH 64MBIT PARALLEL 56VFBGA |
![]() |
MTFC16GALAHEA-WT TRMicron Technology |
IC FLASH 128GBIT MMC 153WFBGA |
![]() |
MT41K2G4RKB-107:NMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
![]() |
25LC1024-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ DIE |
![]() |
7130LA100J/2315Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |