类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 256Gb (32G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 169-VFBGA |
供应商设备包: | 169-VFBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8235AACypress Semiconductor |
IC SRAM MICROPOWER |
|
MT29E512G08CKCCBH7-6:CMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
MT41K512M16TNA-125:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
70V06L45PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
70V05L35J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
7052L35PQFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 132PQFP |
|
MT29F128G08AMAAAC5-Z:AMicron Technology |
IC FLASH 128GBIT PARALLEL 52VLGA |
|
25LC080A-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
MT42L128M32D1LF-25 WT:A TRMicron Technology |
IC DRAM 4GBIT PARALLEL 168FBGA |
|
MT29F256G08EBHAFB16A3WC1-MMicron Technology |
TLC 256G DIE 32GX8 |
|
MT49H8M36BM-25 IT:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
CG8703AFTCypress Semiconductor |
IC WI-FI/BLUETOOTH WICED |
|
MT41J512M8RH-093:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |