English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SST26 SQI® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 64Mb (8M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 1.5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | - |
| 包/箱: | Die |
| 供应商设备包: | Wafer |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S83200J-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
|
AT49BV1604AT-70CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 45CBGA |
|
|
40060362SkyHigh Memory Limited |
IC MEMORY FLASH NAND 48-TSOP |
|
|
W25Q64JVTBIMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 24TFBGA |
|
|
AK6508CSAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KB SPI 10MHZ 8WLCSP |
|
|
28298080 ACypress Semiconductor |
IC FLASH |
|
|
MT29F4T08EYCBBG9-37:B TRMicron Technology |
IC FLASH 4TB PARALLEL 267MHZ |
|
|
CAT25020VI-GT3DSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 8SOIC |
|
|
MT28FW512ABA1HPC-0AATMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
|
EDFM432A1PH-GD-F-R TRMicron Technology |
IC DRAM 12GBIT PARALLEL 168FBGA |
|
|
MT53B512M64D4NW-062 WT:DMicron Technology |
IC DRAM 32GBIT 1600MHZ |
|
|
MTFC16GLXDV-WT TRMicron Technology |
IC FLASH 128GBIT MMC 169VFBGA |
|
|
MT53E128M16D1DS-053 WT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
