类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | - |
访问时间: | 13.125 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (9x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S71GL064NB0BHW0P0Cypress Semiconductor |
IC FLASH RAM 64MBIT PAR 56FBGA |
|
MT35XU512ABA1G12-0AATMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
|
S29GL064S90TFA043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
MT29F1T08CQCCBG2-6C:CMicron Technology |
IC FLASH 1TB PARALLEL 272LFBGA |
|
MT41K256M16HA-107 IT:EMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT25QL128ABB1EW7-CSIT TRMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
MT29C1G12MAACAFAKD-6 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 137TFBGA |
|
8611200826Cypress Semiconductor |
INTEGRATED CIRCUIT |
|
MT29F1G08ABBEAMD-IT:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 130VFBGA |
|
MT49H16M18BM-33Micron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
S99PL127J0010Cypress Semiconductor |
IC FLASH |
|
EDFP112A3PF-JD-F-DMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |
|
MT48H32M16LFB4-6 AAT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |