English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH, RAM |
| 技术: | FLASH - NAND, DRAM - LPDDR4 |
| 内存大小: | 4Gb (512M x 8)(NAND), 4G (128M x 32)(LPDDR4) |
| 内存接口: | Parallel |
| 时钟频率: | 1866 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.8V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 149-WFBGA |
| 供应商设备包: | 149-WFBGA (8x9.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S98KL0CGT00HC0080Cypress Semiconductor |
IC MEMORY FLASH SMD |
|
|
MT40A2G4TRF-093E:AMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
AT49BV640ST-70CURoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 64CBGA |
|
|
S99-50292Cypress Semiconductor |
IC FLASH |
|
|
CG8793AFTCypress Semiconductor |
IC WI-FI/BLUETOOTH WICED |
|
|
25CS640T-E/SNRoving Networks / Microchip Technology |
IC MEMORY EEPROM 64MB SPI |
|
|
MT29F64G08CBEDBL84C3WC1Micron Technology |
IC FLASH 64GBIT PARALLEL |
|
|
MT29C1G12MAADYAML-5 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 153VFBGA |
|
|
N25Q128A13E1441F TRMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 24BGA |
|
|
70V27L25PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
|
24AA08H-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ DIE |
|
|
MT41J256M8HX-15E AIT:DMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
|
MT29E512G08CKCBBH7-6:B TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
