English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PL-J |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-VFBGA |
| 供应商设备包: | 64-FBGA (8x11.6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CG8312AACypress Semiconductor |
IC SRAM DUAL-PORTS SRAM 100TQFP |
|
|
M29W040B90N1Micron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
|
AT49SV802AT-90CIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48CBGA |
|
|
MT44K32M36RCT-125 IT:A TRMicron Technology |
IC RLDRAM 1.125GBIT PAR 800MHZ |
|
|
CG7841AATCypress Semiconductor |
IC SRAM 100TQFP |
|
|
MT52L512M64D4GN-107 WT:B TRMicron Technology |
IC DRAM 32GBIT 933MHZ 256FBGA |
|
|
MT46H64M32L2JG-5 IT:A TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
|
7143LA25J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
MT29F4G16ABBEAH4-IT:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
MT41K256M4JP-15E:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
|
24AA32ASC-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ DIE |
|
|
MT29F256G08AMEBBK7-12:B TRMicron Technology |
IC FLASH 256GBIT PARALLEL 83MHZ |
|
|
MT53B384M64D4NK-053 WT ES:AMicron Technology |
IC DRAM 24GBIT 1866MHZ 366WFBGA |
