类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W128GL7AN6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
7024S25PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
IS62WV1288FALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 36TFBGA |
|
MT42L128M64D2LL-18 WT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
IDT70825S25GRenesas Electronics America |
IC RAM 128KBIT PARALLEL 84PGA |
|
MT53D384M64D4NZ-053 WT ES:C TRMicron Technology |
IC DRAM 24GBIT 1866MHZ FBGA |
|
7016S12J8Renesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |
|
MT29VZZZ7C8DQFSL-046 W.9J8 TRMicron Technology |
536G |
|
IS62WV5128EALL-55BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
AT49BV161T-90CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
MT53D1024M32D4BD-053 WT ES:D TRMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
|
CG8207AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
NP8P128AE3TSM60EMicron Technology |
IC PCM 128MBIT PARALLEL 56TSOP |