English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7130SA35JIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
|
ECF440AACCN-V6-Y3Micron Technology |
LPDDR3 4G DIE 128MX32 |
|
|
MT49H64M9BM-25:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
M27V800-100F1STMicroelectronics |
IC EPROM 8MBIT PARALLEL 42CDIP |
|
|
S99-50248DCypress Semiconductor |
IC GATE NOR |
|
|
CG7881ATTCypress Semiconductor |
IC SRAM SYNC |
|
|
SM671PEA-ADSilicon Motion |
FERRI-UFS BGA 153-B EMMC 3D TLC |
|
|
MT47H64M8SH-25E IT:HMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
70261S55PFI8/2703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
|
MT42L256M32D2LK-18 WT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
|
W972GG8JB-25Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
MT49H16M18BM-5:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
|
S99PL127J0080Cypress Semiconductor |
IC FLASH MEM NOR 56TSOPI |
