类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2 |
内存大小: | 8Gb (256M x 32) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.3V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 216-WFBGA |
供应商设备包: | 216-FBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
W972GG8JB-25Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
![]() |
MT49H16M18BM-5:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
![]() |
S99PL127J0080Cypress Semiconductor |
IC FLASH MEM NOR 56TSOPI |
![]() |
CQ191-80056Cypress Semiconductor |
IC FLASH NOR |
![]() |
MTFC32GAPALNA-AITMicron Technology |
IC FLASH 256GBIT MMC 100TBGA |
![]() |
7024S15JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
![]() |
MT28FW01GABA1HJS-0AATMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
![]() |
47L04-I/W16KRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ DIE |
![]() |
MT29TZZZ5D6EKFRL-107 W.96R TRMicron Technology |
128MX8/128MX16 MCP PLASTIC 1.8V |
![]() |
DS2501S-UNW-111B/T&RMaxim Integrated |
DEV TOOLS |
![]() |
MT29F16G08ABECBM72A3WC1 TRMicron Technology |
IC FLASH 16GBIT PARALLEL DIE |
![]() |
MT53D512M64D4NW-046 WT ES:EMicron Technology |
IC DRAM 32GBIT 2133MHZ 432VFBGA |
![]() |
70V28L15PF8/2703Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |