类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC4M16A2B4-6A IT:J TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
MT46H32M32LFCM-6 L IT:AMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
IDT70P3519S166BFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
|
MT53B4DAPV-DC TRMicron Technology |
LPDDR4 32G 512MX64 FBGA QDP |
|
W25Q64FVSH01Winbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ |
|
MT29TZZZ7D7DKLAH-107 W.9B7 TRMicron Technology |
ALL IN ONE MCP 280G |
|
LH28F160S5HNS-S1Sharp Microelectronics |
IC FLASH 16MBIT PARALLEL 56SSOP |
|
CG7498AACypress Semiconductor |
IC SRAM NON VOLATILE 48FBGA |
|
MT29F4G01ABBFD12-ITES:FMicron Technology |
IC FLASH 4GBIT SPI 24TBGA |
|
MT46H128M16LFB7-5 IT:B TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
CG8264AATCypress Semiconductor |
IC SRAM |
|
IS43R86400D-5BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
M50FLW080AN5GMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP |