English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (8K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V28L25PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
CG8449AATCypress Semiconductor |
SYNC SRAMS |
|
|
S25FL064LABNFV041Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 108MHZ |
|
|
70V24L55PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
7143LA25JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
MT53D1024M64D8NW-053 WT:D TRMicron Technology |
IC DRAM 64GBIT 1866MHZ 432VFBGA |
|
|
MT53B384M32D2NK-062 WT ES:BMicron Technology |
IC DRAM 12GBIT 1600MHZ FBGA |
|
|
CY7C185-1XW14ICypress Semiconductor |
IC SRAM 64KBIT PARALLEL DIE |
|
|
7007S35GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PGA |
|
|
7133LA45JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
S99-50479Cypress Semiconductor |
IC FLASH |
|
|
MT29F32G08CBACAL73A3WC1Micron Technology |
IC FLASH 32GBIT PARALLEL DIE |
|
|
MT29F512G08CKCCBH7-6R:CMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
