RES 0.18 OHM 13W 10% AXIAL
FUSE BOARD MOUNT 3.5A 125VAC/VDC
TGP10000ULM-0.040-02-0808
IC DRAM 32G 2133MHZ FBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 32Gb (1G x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7024S17PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT25TL512BBA8ESF-0AATMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
|
7005S25PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MT49H16M36BM-25 IT:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MSP14LV640-E1-TJ-001Cypress Semiconductor |
IC MEMORY FLASH NOR SMD |
|
EDB4416BBBH-1DIT-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
IS42S16160G-6BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
N25Q512A11G1240F TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MTFC4GMWDQ-AITMicron Technology |
IC FLASH 32GBIT MMC 100LBGA |
|
MT29C1G12MAADYAKE-5 IT TRMicron Technology |
IC FLASH RAM 1GBIT PAR 137TFBGA |
|
MT40A512M16TB-062E IT:JMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
IDT71T016SA15BF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
SFEM008GB1EM1TO-I-HG-11P-STDSwissbit |
IC FLSH 64GBIT EMMC 52MHZ 153BGA |