类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F128G08AMCABK3-10:A TRMicron Technology |
IC FLASH 128GBIT PARALLEL 100MHZ |
|
70V27L15PF/2703Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT53D4DACR-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT53D4DANW-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
24AA32ASC-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ DIE |
|
M29W640GL70ZF3F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 64TBGA |
|
S99FL064P0XMFI001Cypress Semiconductor |
IC FLASH NOR |
|
7024L35JI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
MT46H128M16LFB7-6 IT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
W972GG8JB25IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
25CS640T-E/STRoving Networks / Microchip Technology |
IC MEMORY EEPROM 64MB SPI |
|
MT46H128M32L2MC-6 WT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 240WFBGA |
|
W25Q64FVSH03Winbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ |